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R&S MXO 4 series Oscilloscope

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Rohde & Schwarz has launched a new series of oscilloscopes that is said to bring new advancements to the table. The R&S MXO 4 series oscilloscopes feature the world’s fastest real-time update rate, moreover, it employs a 12-bit ADC which offers 16 times the resolution of traditional 8-bit oscilloscopes. These features not only increase the number of samples but offers better memory, faster sampling and lower measurement noise. This means that an engineer will be able to quickly see and isolate infrequent events, get a better understanding of physical layer signals and test faster. The oscilloscope also enables engineers to view and analyse more RF signals than any other oscilloscope in its class. The R&S MXO 4 oscilloscopes come in four-channel models with bandwidths of 200 MHz, 350 MHz, 500 MHz, 1 GHz, and 1.5 GHz. The oscilloscope offers the world’s fastest real-time update rate of over 4.5 million acquisitions per second and offers over 100 times the standard memory of a
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Atomically thin materials instead of silicon as the basis for transistors

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          The use of atomically thin materials instead of silicon  as the basis for new transistors is exciting but connecting  those ‘2D’ materials to other conventional  electronic components has proved difficult. Now  researchers at MIT, the University of California at  Berkeley, the Taiwan Semiconductor Manufacturing  Company, and elsewhere have found a new way of  making those electrical connections, which could  help to unleash the potential of 2D materials and  further the miniaturisation of components—possibly  enough to extend Moore’s Law, at least for the near  future. The 2D materials or sheets, just a few atoms  thick, meet all the requirements for enabling miniaturisation,  potentially reducing by several times a key  parameter called the channel length, from around 5  to 10 nanometres in current cutting-edge chips to a  sub-nanometer scale. At the interface between the semimetal (bismuth) and the 2D semiconductor (MoS2), there is no energy barrier for the electron to go t
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